Non-Volatile 8Mb High Performance MRAM, 1.8V

The M1008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M1008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M1008204 supports Quad SPI, SDR • Utilizing advanced pMTJ STT-MRAM technology\n• Low active write and read current\n• Industrial plus operating temperature: -40°C to +105°C\n• Package: 8-pin SOIC and 8-pad DFN (WSON) ;

Renesas

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨