Intel® MAX® 10 FPGA Device Overview

文件：240.5 Kbytes 页数：14 Pages

Intel

英特尔

丝印：M10；Package：MSOP-10L；1.8MHz SYNCHRONOUS BOOST CONVERTER

Features • 94 Efficient Step-Up DC to DC Converter • Wide Input Range 0.9V to 5.5V • 1.8V to 5.5V Adjustable Output Voltage • 1.8MHz Operating Frequency • Current Mode Operation for faster transient response and better loop stability • 1μA Shutdown Mode • Suitable with Low ESR Ceramic Capac

文件：249.39 Kbytes 页数：11 Pages

DIODES

美台半导体

MINIATURE PLASTIC SILICON RECTIFIER

[GENL INSTR/ POWER] MINIATURE PLASTIC SILICON RECTIFIER

文件：92.2 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

depletion-type n-channel MOSFETs

• Small-Signal Amplifiers • Ultra-High Input Impedance Amplifiers Electrometers Smoke Detectors pH Meters • Low-Level Chopper Amplifiers

文件：68.83 Kbytes 页数：1 Pages

VishayVishay Siliconix

威世威世科技公司

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨

High Performance Serial MRAM Memory

Features  Interface • Serial Peripheral Interface QSPI (4-4-4) • Single Data Rate Mode: 108MHz • Double Data Rate Mode: 54MHz  Technology • 40nm pMTJ STT-MRAM Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification in Table 31)  Density • 4Mb,

文件：1.14047 Mbytes 页数：52 Pages

RENESAS

瑞萨