LZ1 Emitter on MCPCB For emitter specification, please refer to the emitter datasheet LZ1-00UV0R.

Features - Thermal Resistance: 1.5 K/W (only MCPCB without emitter) - Diameter of MCPCB: 19.9 mm

文件：1.46041 Mbytes 页数：14 Pages

AMSCO

艾迈斯欧司朗

32-UNIT HIGH VOLTAGE MOS IC

Description The LZ1132BD/LZ1132BM/LZ1132BR is a 300V 32-output-port monolithic IC fabricated using Sharps advanced P-channel DMOS process. It can be used as a matrix driver for electroluminescent panels, plasma display panels, electrostatic printers.

文件：268.48 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

32-UNIT HIGH VOLTAGE MOS IC

Description The LZ1132BD/LZ1132BM/LZ1132BR is a 300V 32-output-port monolithic IC fabricated using Sharps advanced P-channel DMOS process. It can be used as a matrix driver for electroluminescent panels, plasma display panels, electrostatic printers.

文件：268.48 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

32-UNIT HIGH VOLTAGE MOS IC

Description The LZ1132BD/LZ1132BM/LZ1132BR is a 300V 32-output-port monolithic IC fabricated using Sharps advanced P-channel DMOS process. It can be used as a matrix driver for electroluminescent panels, plasma display panels, electrostatic printers.

文件：268.48 Kbytes 页数：5 Pages

SHARPSharp Corporation

夏普

32-UNIT HIGH VOLTAGE MOS IC

Description The LZ1134R is a high voltage (300V) 32-output-port monolithic IC fabricated using Sharps advanced P-channel DMOS process. It can be used as a matrix driver for electroluminescent panels, plasma display panels, electrostatic printers.

文件：198.03 Kbytes 页数：3 Pages

SHARPSharp Corporation

夏普

LZ1 Emitter on MCPCB For emitter specification, please refer to the emitter datasheet LZ1-00UV0R.

Features - Thermal Resistance: 2.0 K/W (only MCPCB without emitter) - Diameter of MCPCB: 11.5 mm

文件：1.52317 Mbytes 页数：14 Pages

AMSCO

艾迈斯欧司朗

LZ1 Emitter on MCPCB For emitter specification, please refer to the emitter datasheet LZ1-00UV0R.

Features - Thermal Resistance: 2.0 K/W (only MCPCB without emitter) - Diameter of MCPCB: 11.5 mm

文件：1.52317 Mbytes 页数：14 Pages

AMSCO

艾迈斯欧司朗

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange. FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing

文件：66.77 Kbytes 页数：12 Pages

PHI

PHI

1/2-type Interline Color CCD Area Sensor with 2 140 k Pixels

DESCRIPTION The LZ21N3 is a 1/2-type (8.08 mm) solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 2 140 000 pixels (1 704 horizontal x 1 255 vertical), the sensor provides a stable high-resolution color image. FEATURES • Optical size

文件：153.9 Kbytes 页数：19 Pages

SHARPSharp Corporation

夏普

1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels

DESCRIPTION The LZ21N3V/VS are 1/2-type (8.08 mm) solidstate image sensors that consist of PN photodiodes and CCDs (charge-coupled devices). With approximately 2 140 000 pixels (1 704 horizontal x 1 255 vertical), the sensor provides a stable high-resolution color image. FEATURES • Optical size

文件：161.01 Kbytes 页数：18 Pages

SHARPSharp Corporation

夏普