128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

文件：237.56 Kbytes 页数：16 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

文件：237.56 Kbytes 页数：16 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

文件：237.56 Kbytes 页数：16 Pages

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

LYONTEK

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1024K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY62102516 is a 16,777,216-bit low power CMOS static random access memory organized as 1,048,576 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The

文件：195.83 Kbytes 页数：13 Pages

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