1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

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1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

来扬科技

1024K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY6210248 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6

文件：191.24 Kbytes 页数：13 Pages

lyontek

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

文件：237.56 Kbytes 页数：16 Pages

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128K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The LY621024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY6210

文件：237.56 Kbytes 页数：16 Pages

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