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LX5512E-LQ中文资料美高森美数据手册PDF规格书
LX5512E-LQ规格书详情
DESCRIPTION
The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4 – 2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current Icq ~50mA
◾ Power Gain ~34dB @ 2.45GHz and Pout = 19dBm
◾ Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM
◾ EVM ~ 3.0 for 64QAM / 54Mbps and Pout = 19dBm
◾ Small Footprint (3 x 3 mm2)
◾ Low Profile (0.9mm)
APPLICATIONS
◾ IEEE 802.11b/g
产品属性
- 型号：
LX5512E-LQ
- 制造商：
MICROSEMI
- 制造商全称：
Microsemi Corporation
- 功能描述：
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MROSEMI/美高森美 |
24+ |
NA/ |
8996 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MICROSEMI |
2016+ |
QFN |
2964 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Microsemi |
23+ |
QFN |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
MICROSEMI |
06+ |
QFN16 |
2138 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
MICROSEMI |
23+ |
NA |
21815 |
专做原装正品,假一罚百! |
询价 | ||
NA |
2017+ |
QFN |
28562 |
只做原装正品假一赔十! |
询价 | ||
Microsemi |
24+ |
QFN |
5421 |
询价 | |||
MICROSEMI/美高森美 |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
MICROSEMI/美高森美 |
24+ |
QFN |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
MICROSEMI/美高森美 |
2447 |
QFN16 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
