LX5512BLQ中文资料美高森美数据手册PDF规格书

DESCRIPTION

The LX5512B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a threestage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA.

KEY FEATURES

◾ Advanced InGaP HBT

◾ 2.4-2.5GHz Operation

◾ Single-Polarity 3.3V Supply

◾ Low Quiescent Current ICQ ~65mA

◾ Power Gain ~ 32 dB at 2.45GHz & Pout=19dBm

◾ Total Current ~140mA for Pout=19dBm at 2.45 GHz OFDM

◾ EVM ~3 for 64QAM/ 54Mbps & Pout=19dBm

◾ Small Footprint: 3x3mm2

◾ Low Profile: 0.9mm

APPLICATIONS

◾ IEEE 802.11b/g