LX5512E中文资料美高森美数据手册PDF规格书
LX5512E规格书详情
DESCRIPTION
The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4 – 2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current Icq ~50mA
◾ Power Gain ~34dB @ 2.45GHz and Pout = 19dBm
◾ Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM
◾ EVM ~ 3.0 for 64QAM / 54Mbps and Pout = 19dBm
◾ Small Footprint (3 x 3 mm2)
◾ Low Profile (0.9mm)
APPLICATIONS
◾ IEEE 802.11b/g
产品属性
- 型号：
LX5512E
- 制造商：
MICROSEMI
- 制造商全称：
Microsemi Corporation
- 功能描述：
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
05+ |
QFN16 |
2800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
MICROSEMI |
23+ |
QFN16 |
12800 |
正规渠道,只有原装! |
询价 | ||
Microsemi Corporation |
23+ |
9000 |
原装正品，支持实单 |
询价 | |||
Microsemi Corporation |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
MICROSEMI |
1844+ |
QFN |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MICROSEMI |
2005 |
QFN16 |
38900 |
原装现货海量库存欢迎咨询 |
询价 | ||
MICROSEMI |
24+ |
QFN16 |
38900 |
询价 | |||
MICROSE |
23+ |
QFN |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
MICROSEMI/美高森美 |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
MICROSEMI |
07+ |
原厂原装 |
21000 |
自己公司全新库存绝对有货 |
询价 |
