SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Easy to Parallel and Simple to Drive ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：340.02 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：SIC1MO120G0025；Package：TO-247-4L；1200 V, 25 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source

文件：415.04 Kbytes 页数：10 Pages

Littelfuse

力特

丝印：SIC1MO120G0120；Package：TO-247-4L；1200 V, 120 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures • Ultra-low on-resistance • Optimized package with separate driver source

文件：528.61 Kbytes 页数：10 Pages

Littelfuse

力特

丝印：SIC1MO170E0750；Package：TO-247-3L；1700 V, 750 mOhm N-Channel SiC MOSFET

Features • Optimized for high-frequency, high-efficiency applications • Extremely low gate charge and output capacitance • Low gate resistance for high-frequency switching • Normally-off operations at all temperatures Ultra-low on-resistance Applications • High-frequency applications • S

文件：515.2 Kbytes 页数：10 Pages

Littelfuse

力特

SiC N-Channel MOSFET

FEATURES ·Low gate resistance forhigh-frequency switching ·Ultra-low on-resistance ·Normally-off operation atall temperatures ·Extremely low gatecharge and outputcapacitance APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：348.14 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：SIC2SD065A10；Package：TO-220-2L；LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode

Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal m

文件：646.9 Kbytes 页数：5 Pages

Littelfuse

力特

N-Channel 1.8-V (G-S) MOSFET

文件：442.99 Kbytes 页数：5 Pages

LRC

乐山无线电

N-Channel 1.8-V (G-S) MOSFET

文件：457.25 Kbytes 页数：6 Pages

LRC

乐山无线电

N-Channel 1.8-V (G-S) MOSFET

文件：323.21 Kbytes 页数：5 Pages

LRC

乐山无线电

N-Channel 1.8-V (G-S) MOSFET

文件：398.98 Kbytes 页数：6 Pages

LRC

乐山无线电