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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
07N60CFD	文件：2.15004 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
CJP07N60	文件：398.75 Kbytes Page：4 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CJP07N60	文件：1.00382 Mbytes Page：3 Pages	N-ChannelPowerMOSFET	ZPSEMI ZP Semiconductor	ZPSEMI
CJPF07N60	文件：1.029869 Mbytes Page：3 Pages	Plastic-EncapsulateMOSFETS	ZPSEMI ZP Semiconductor	ZPSEMI
CJPF07N60	文件：1.70485 Mbytes Page：4 Pages	N-ChannelPowerMOSFET	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
CMT07N60	文件：221.33 Kbytes Page：7 Pages	POWERFIELDEFFECTTRANSISTOR [ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
FSA07N60A	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
FTA07N60C	文件：54.71 Kbytes Page：6 Pages	N-ChannelEnhancement InPowerProductLines	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
H07N60	文件：61.51 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕	HSMC
H07N60E	文件：61.51 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕	HSMC
H07N60F	文件：61.51 Kbytes Page：5 Pages	N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient	HSMC 华昕	HSMC
ISPP07N60CFD	文件：338.65 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.7Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW07N60CFD	文件：335.29 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤700mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MH07N60CT	文件：1.40092 Mbytes Page：8 Pages	600VSiliconN-ChannelPowerMOSFET
MHF07N60CT	文件：4.21888 Mbytes Page：8 Pages	600VSiliconN-ChannelPowerMOSFET
MJU07N60CT	文件：302.39 Kbytes Page：7 Pages	600VSuperJunctionPowerMOSFET
SPA07N60CFD	文件：348.3 Kbytes Page：12 Pages	CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CR	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA07N60CFD	文件：260.54 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPP07N60CFD	文件：1.1083 Mbytes Page：10 Pages	N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
SPP07N60CFD	文件：340.77 Kbytes Page：12 Pages	CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LC	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市向鸿伟业电子有限公司	LSE07N60	LONTEN	17+	TO-263	25500	门市原装现货!支持实单,一片起卖!	询价
深圳市粤骏腾电子科技有限公司	LSE07N60	XTW	23+	QFN	29119	绝对原厂支持只做自己现货优势	询价
深圳市威尔健半导体有限公司	LSE07N60	龙腾	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	LSE07N60	龙腾	2022	TO-263	80000	原装现货,OEM渠道,欢迎咨询	询价
贸泽芯城（深圳）电子科技有限公司	LSE07N60	龙腾		TO-263	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市得捷芯城科技有限公司	LSE07N60	龙腾	23+	NA/	4072	原装现货,当天可交货,原型号开票	询价
深圳市汇莱威科技有限公司	LSE07N65	龙腾		TO-263	265209	假一罚十原包原标签常备现货!	询价
深圳市芯祺盛科技有限公司	LSE-090NX4532LFGT	BTLFUSE	1911+	1812	250000	保证原装房间现货GDT	询价
深圳市莱克讯科技有限公司	LSE10014.3H503	MT	2017+	TSSOP	12589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市卓越微芯电子有限公司	LSE10014.3H503	MT	2020+	TSSOP	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多LSE07N60供应商更新时间2024-5-1 16:12:00

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