Power Transducer Series L-UNIT

文件：116.91 Kbytes 页数：3 Pages

MSYSTEM

爱模

丝印：LPD；Package：CP-6-3；20 V, 200 mA, Low Noise, CMOS LDO Linear Regulator

GENERAL DESCRIPTION The ADP7118 is a CMOS, low dropout (LDO) linear regulator that operates from 2.7 V to 20 V and provides up to 200 mA of output current. This high input voltage LDO is ideal for the regulation of high performance analog and mixed-signal circuits operating from 20 V down to 1.2

文件：915.43 Kbytes 页数：24 Pages

AD

亚德诺

丝印：LPD；Package：UJ-5；20 V, 200 mA, Low Noise, CMOS LDO Linear Regulator

GENERAL DESCRIPTION The ADP7118 is a CMOS, low dropout (LDO) linear regulator that operates from 2.7 V to 20 V and provides up to 200 mA of output current. This high input voltage LDO is ideal for the regulation of high performance analog and mixed-signal circuits operating from 20 V down to 1.2

文件：915.43 Kbytes 页数：24 Pages

AD

亚德诺

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimiz

文件：30.4 Kbytes 页数：2 Pages

FILTRONIC

HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structu

文件：68.94 Kbytes 页数：2 Pages

FILTRONIC

PACKAGED HIGH DYNAMIC RANGE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au g

文件：61.02 Kbytes 页数：3 Pages

FILTRONIC

PACKAGED HIGH DYNAMIC RANGE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structu

文件：68.02 Kbytes 页数：2 Pages

FILTRONIC

Phase Detectors 1000mV DC output , 7dBmRF

文件：68.29 Kbytes 页数：1 Pages

MINI

Single, dual and triple output 10 Watt Wide input DC/DC converters

文件：44.58 Kbytes 页数：2 Pages

ARTESYN

Single, dual and triple output 10 Watt Wide input DC/DC converters

文件：44.58 Kbytes 页数：2 Pages

ARTESYN