HIGH PERFORMANCE PHEMT

DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structu

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FILTRONIC

PACKAGED HIGH DYNAMIC RANGE PHEMT

Filtronic

LPE200BMB series

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ETCList of Unclassifed Manufacturers

未分类制造商

Low-Peak??LPJ Class J 600Vac/300Vdc, 70-600A, dual element, time-delay fuses

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EATON

伊顿

Dual-Element, Time-Delay Fuses

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COOPER