LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

文件：1.11356 Mbytes 页数：23 Pages

TI

德州仪器

LP8900 Ultra Low Noise, Dual 200mA Linear Regulator for RF/Analog Circuits

文件：1.05419 Mbytes 页数：17 Pages

TI

德州仪器

Ultra Low Noise, Dual 200mA Linear Regulator for RF/Analog Circuits

文件：351.04 Kbytes 页数：14 Pages

NSC

国半

具有使能功能的 200mA、低噪声、高精度、双通道低压降稳压器

The LP8900 is a dual LDO capable of supplying 200-mA output current per regulator. Designed to meet the requirements of RF and analog circuits, the LP8900 provides low device noise, high PSRR, low quiescent current, and superior line transient response figures. Using new innovative design techniques • Input Voltage Operation: 1.8 V to 5.5 V\n• Output Voltage: 1.2 V to 3.6 V\n• Accuracy Over Temperature: 1% \n• Output Voltage Noise: 6 µVRMS\n• PSRR: 75 dB at 1 kHz\n• Dropout: 110 mV at 200 mA Load\n• Quiescent Current: 48 µA per Regulator\n• Start-Up Time: 80 µs \n• Stable With Ceramic Capac;

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器

LP8900 200-mA Ultra-Low-Noise Dual LDO For RF and Analog Circuits

1 Features 1• Input Voltage Operation: 1.8 V to 5.5 V • Output Voltage: 1.2 V to 3.6 V • Accuracy Over Temperature: 1% • Output Voltage Noise: 6 μVRMS • PSRR: 75 dB at 1 kHz • Dropout: 110 mV at 200 mA Load • Quiescent Current: 48 μA per Regulator • Start-Up Time: 80 μs • Stable With

文件：667.85 Kbytes 页数：23 Pages

TI

德州仪器