P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：32.8 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：597.6 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：597.6 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

文件：597.6 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

文件：769.61 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

文件：540.01 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

P-Channel Enhancement-Mode LATERAL MOSFET

These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient Ultra-low threshold\nHigh input impedance\nLow input capacitance\nFast switching speeds\nLow on-resistance\nFreedom from secondary breakdown\nLow input and output leakage;

Microchip

微芯科技

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：32.8 Kbytes 页数：4 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：597.6 Kbytes 页数：6 Pages

SUTEX

P-Channel Enhancement-Mode Lateral MOSFET

General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance an

文件：597.6 Kbytes 页数：6 Pages

SUTEX