低压功率MOSFET

• P-Channel:VDS = -30V RDS(ON)≤115m,VGS@-4.5V,IDS@-1.0A RDS(ON)≤150m,VGS@-2.5V,IDS@-1.0A\n• We declare that the material of product compliance with RoHS requirements and Halogen Free.\n• S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 q;

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丝印：M4；Package：SOT26(TSOP-6)；30 V Complementary Trench MOSFET P-Channel:VDS = -30V

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