N-Channel Depletion-Mode MOSFET

Advanced DMOS Technology The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources,

文件：69.63 Kbytes 页数：2 Pages

SUTEX

N-Channel Depletion-Mode DMOS FET

文件：436.77 Kbytes 页数：3 Pages

SUTEX

N-Channel Depletion-Mode DMOS FETs

文件：580.93 Kbytes 页数：16 Pages

Microchip

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N-Channel Depletion-Mode DMOS FET

The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplifi Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and low CISS \nESD gate protection;

Microchip

微芯科技

N-Channel Depletion-Mode MOSFET

Advanced DMOS Technology The LND2 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. The LND2 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources,

文件：69.63 Kbytes 页数：2 Pages

SUTEX

N-Channel Depletion-Mode DMOS FET

文件：436.77 Kbytes 页数：3 Pages

SUTEX

N-Channel Depletion-Mode DMOS FET

文件：436.77 Kbytes 页数：3 Pages

SUTEX

N-Channel Depletion-Mode DMOS FETs

文件：580.93 Kbytes 页数：16 Pages

Microchip

微芯科技

N-Channel Depletion-Mode DMOS FETs

文件：580.93 Kbytes 页数：16 Pages

Microchip

微芯科技

N-Channel Depletion-Mode DMOS FETs

文件：580.93 Kbytes 页数：16 Pages

Microchip

微芯科技