丝印：LMG3422R050；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN(RQZ)；LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.85082 Mbytes 页数：58 Pages

TI

德州仪器

具有集成驱动器、保护和温度报告功能的 600V 50mΩ GaN FET

The LMG342xR050 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.\n\nThe LMG342xR050 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results • Qualified for JEDEC JEP180 for hard-switching topologies\n• Integrated high precision gate bias voltage\n• 3.6-MHz switching frequency\n• Operates from +12-V unregulated supply\n• Robust protection \n• Advanced power management \n• Ideal diode mode reduces third-quadrant losses in LMG3425R050;

TI

德州仪器

LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器

LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.85082 Mbytes 页数：58 Pages

TI

德州仪器

LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.85082 Mbytes 页数：58 Pages

TI

德州仪器

Package：54-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：600-V 50-M GAN FET WITH INTEGRAT

TI

德州仪器

Package：54-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：600-V 50-M GAN FET WITH INTEGRAT

TI

德州仪器