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型号	下载订购	功能描述	制造商上传企业	LOGO
LMG3410R050RWHR.A	文件：1.11774 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11774 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHR.A	文件：1.1146 Mbytes Page：37 Pages	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.1146 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHR.A	文件：1.11817 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN(RWH)；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11817 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHR.B	文件：1.11774 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11774 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHR.B	文件：1.1146 Mbytes Page：37 Pages	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.1146 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHR.B	文件：1.11817 Mbytes Page：37 Pages	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11817 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHRG4	文件：1.11817 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN(RWH)；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11817 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHRG4.A	文件：1.11817 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN(RWH)；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11817 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHRG4.A	文件：1.11774 Mbytes Page：37 Pages	丝印：LMG3410R050；Package：VQFN；LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.11774 Mbytes 页数：37 Pages	TI 德州仪器	TI
LMG3410R050RWHRG4.A	文件：1.1146 Mbytes Page：37 Pages	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l 文件：1.1146 Mbytes 页数：37 Pages	TI 德州仪器	TI

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技术参数

VDS (Max)(V)：
600
ID (Max)(A)：
12
RDS (on) (Milliohm)：
70
Coss (pF)：
71
VCC (V)：
12
Logic Level：
3V to 5V CMOS and TTL
Prop Delay (ns)：
20
Control Method：
External

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	LMG3410	TI/德州仪器	23+		13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市中亿伟业电子有限公司	LMG3410	TI/德州	2018+	3Vto5VCMOSandTTL	32500	德州代理承诺销售原装正品公司可开正规17%增值税票	询价
深圳市百诺芯科技有限公司	LMG3410R070RWHT	TI/德州仪器	23+	32-VQFN	4256	原装正品代理渠道价格优势	询价
讯运(深圳/上海)电子有限公司	LMG3410R050RWHR	TI(德州仪器)	2021+	VQFN-32(8x8)	499		询价
深圳市宇创芯科技有限公司	LMG3410R150RWHR	TI/德州仪器	24+	VQFN-32	9600	原装现货,优势供应,支持实单!	询价
深圳市正纳电子有限公司	LMG3410R070RWHT	TI(德州仪器)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市昂芯微科技有限公司	LMG3410R150RWHR	TI	23+	N/A	560	原厂原装	询价
深圳市联世界科技有限公司	LMG3410R070RWHT	TI(德州仪器)	24+/25+		10000	原装正品现货库存价优	询价
深圳市河锋鑫科技有限公司	LMG3410R070RWHT	TI(德州仪器)	2021+		8000	原装现货，欢迎询价	询价
深圳市芯泽盛世科技有限公司	LMG3410R050RWHR	TI/德州仪器	25+	VQFN-32	8880	原装认准芯泽盛世！	询价

更多LMG3410供应商更新时间2026-1-26 11:10:00

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