| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LMG2652 | LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1 Features • 650V GaN power-FET half bridge • 140mΩ low-side and high-side GaN FETs • Integrated gate drivers with 文件:1.56704 Mbytes 页数:35 Pages | TI 德州仪器 | TI | |
丝印:LMG2652;Package:VQFN;LMG2652 650V 140mΩ GaN Half Bridge With Integrated Driver and Current Sense Emulation 1 Features • 650V GaN power-FET half bridge • 140mΩ low-side and high-side GaN FETs • Integrated gate drivers with 文件:1.56704 Mbytes 页数:35 Pages | TI 德州仪器 | TI | ||
LMG2652 | 具有集成驱动器、保护和电流检测功能的 650V、140mΩ GaN 半桥 LMG2652 是一款 650V 140mΩ GaN 功率 FET 半桥。LMG2652 通过在 6mm x 8mm QFN 封装中集成半桥功率 FET、栅极驱动器、自举二极管和高侧栅极驱动电平转换器,可简化设计、减少元件数量并缩减布板空间。\n\n与传统的电流检测电阻相比,低侧电流检测仿真可降低功耗,并允许将低侧散热焊盘连接到 PCB 电源地进行冷却。\n\n高侧 GaN 功率 FET 可通过低侧参考栅极驱动引脚 (INH) 或高侧参考栅极驱动引脚 (GDH) 进行控制。在具有挑战性的电源开关环境中,高侧栅极驱动信号电平转换器能够可靠地将 INH 引脚信号传输到高侧栅极驱动器。智能开关 Ga 650V GaN 功率 FET 半桥\n \n140mΩ 低侧和高侧 GaN FET\n \n传播延迟低于 100ns 的集成栅极驱动器\n \n具有高带宽和高精度的电流检测仿真\n \n低侧参考 (INH) 和高侧参考 (GDH) 高侧栅极驱动引脚\n \n低侧 (INL)/高侧 (INH) 栅极驱动互锁\n \n高侧 (INH) 栅极驱动信号电平转换器\n \n智能开关自举二极管功能\n \n高侧启动:<8µs\n \n低侧/高侧逐周期过流保护\n \n过热保护\n \nAUX 空闲静态电流:250µA\n \nAUX 待机静态电流:50µA\n \nBST 空闲静态电流:70µA\n \; | TI 德州仪器 | TI | |
GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers General Description The MAX2651/MAX2652/MAX2653 silicon germanium (SiGe), low-noise amplifiers (LNAs) are intended for use in GSM900, DCS1800, and PCS1900 band wireless handsets. The MAX2651/MAX2652 consist of two LNAs, one optimized for the GSM900 band and the other optimized for the DCS1800/PCS 文件:466.44 Kbytes 页数:16 Pages | MAXIM 美信 | MAXIM | ||
GSM900 and DCS1800/PCS1900 Dual-Band, Low-Noise Amplifiers General Description The MAX2651/MAX2652/MAX2653 silicon germanium (SiGe), low-noise amplifiers (LNAs) are intended for use in GSM900, DCS1800, and PCS1900 band wireless handsets. The MAX2651/MAX2652 consist of two LNAs, one optimized for the GSM900 band and the other optimized for the DCS1800/PCS 文件:466.44 Kbytes 页数:16 Pages | MAXIM 美信 | MAXIM | ||
Dual octal transceiver/registers, non-inverting 3-State 文件:162.66 Kbytes 页数:15 Pages | PHI PHI | PHI |
技术参数
- RDS(on) (mΩ):
140
- ID (max) (A):
6.1
- Features:
Bottom-side cooled
- Rating:
Catalog
- Operating temperature range (°C):
-40 to 125
- 封装:
VQFN (RFB)
- 引脚:
19
- 尺寸:
48 mm² 8 x 6
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
N/A |
22360 |
样件支持,可原厂排单订货! |
询价 | ||
TI |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
VIS |
24+ |
32 |
询价 | ||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI(德州仪器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
TI/德州仪器 |
26+ |
原厂封装 |
10280 |
询价 |
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