首页 >LMBT5551LT1G-D>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNEPITAXIALSILICONTRANSISTOR HIGHVOLTAGETRANSISTOR ●CollectorDissipation:Pc-225mW(Ta=25°) ●Collector-EmillerVoltage:VCEO=160V | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
HighVoltageTransistors(NPNSilicon) HighVoltageTransistors NPNSilicon Features •Pb−FreePackagesareAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistors HighVoltageTransistors NPNSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
HighVoltageTransistors(NPNSilicon) HighVoltageTransistors NPNSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
NPNEPITAXIALPLANARTRANSISTOR Description TheMMBT5551LT1isdesignedforgeneralpurposeapplicationsrequiringhighBreakdownVoltages. | TGS Tiger Electronic Co.,Ltd | TGS | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | AVICTEK Avic Technology | AVICTEK | ||
HighVoltageTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistors HighVoltageTransistors NPNSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HighVoltageTransistorsNPNSilicon | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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