IC VREF SHUNT 1.22V TO46-2

TI

德州仪器

Reference Diode

文件：126.55 Kbytes 页数：4 Pages

NSC

国半

Package：TO-46-2，金属罐；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 电压基准 描述：IC VREF SHUNT 5% TO2

TI

德州仪器

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

文件：63.27 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

文件：18.64 Kbytes 页数：2 Pages

NTE

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

文件：44.57 Kbytes 页数：2 Pages

PANASONIC

松下