LM20 2.4-V, 10-μA, SC70, DSBGA Temperature Sensor

1 Features 1• Rated for −55°C to 130°C Range • Available in SC70 and DSBGA Package • Predictable Curvature Error • Suitable for Remote Applications • Accuracy at 30°C ±1.5 to ±4°C (Maximum) • Accuracy at 130°C and −55°C ±2.5 to ±5°C (Maximum) • Power Supply Voltage Range 2.4 V to 5.5 V •

文件：845.43 Kbytes 页数：26 Pages

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德州仪器

HIGH PRECISION PLATE RESISTORS

文件：449.8 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

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LM20 2.4V, 10關A, SC70, micro SMD Temperature Sensor

文件：218.14 Kbytes 页数：9 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LM20 2.4V, 10關A, SC70, DSBGA Temperature Sensor

文件：1.04117 Mbytes 页数：18 Pages

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DSBGA Temperature Sensor

文件：1.21942 Mbytes 页数：25 Pages

TI

德州仪器

2.4V, 10關A, SC70, micro SMD Temperature Sensor

文件：652.01 Kbytes 页数：10 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

丝印：L2005D；Package：SOIC；LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

丝印：L005；Package：WSON；LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器