LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

LM2005 20 Watt Automotive Power Amplifier

文件：205.68 Kbytes 页数：8 Pages

NSC

国半

具有 8V UVLO 和集成式自举二极管的 107V、0.5A/0.8A 半桥栅极驱动器

LM2005 是一款紧凑型高压栅极驱动器，专为驱动采用同步降压或半桥配置的高侧和低侧 N 沟道 MOSFET 而设计。 集成的自举二极管无需使用外部分立式二极管，从而节省布板空间并降低系统成本。\n\nSH 引脚具有–1V 直流和 –19.5V 瞬态负电压处理能力，可提升高噪声应用中的系统稳健性。 该器件采用小型热增强型 8 引脚 WSON 封装，可将驱动器放置在更靠近电机相位的位置，从而改善 PCB 布局。 LM2005 还采用与业界通用引脚排列兼容的 8 引脚 SOIC 封装。在低侧和高侧电源轨上均提供欠压锁定 (UVLO) 功能，以在上电和断电期间提供保护。 • Drives two N-channel MOSFETs in half-bridge configuration\n• 8-V typical undervoltage lockout on GVDD\n• –19.5-V absolute maximum negative transient voltage handling on SH\n• 115-ns typical propagation delay;

TI

德州仪器

LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

丝印：L2005D；Package：SOIC；LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

丝印：L005；Package：WSON；LM2005 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO and Integrated Bootstrap Diode

1 Features • Drives two N-channel MOSFETs in half-bridge configuration • Integrated bootstrap diode • 8-V typical undervoltage lockout on GVDD • 107-V absolute maximum voltage on BST • –19.5-V absolute maximum negative transient voltage handling on SH • 0.5-A/0.8-A peak source/sink current

文件：2.26303 Mbytes 页数：32 Pages

TI

德州仪器

2.00 inch 5x7 Dot Matrix LED Display

文件：192.34 Kbytes 页数：3 Pages

LIGHTKEY

LightKey Optoelectronics Ltd.

2.00 inch 5x7 Dual Color Dot Matrix LED Display

文件：169.32 Kbytes 页数：3 Pages

LIGHTKEY

LightKey Optoelectronics Ltd.

2.00 inch 5x7 Dot Matrix LED Display

文件：192.34 Kbytes 页数：3 Pages

LIGHTKEY

LightKey Optoelectronics Ltd.

2.00 inch 5x7 Dot Matrix LED Display

文件：192.34 Kbytes 页数：3 Pages

LIGHTKEY

LightKey Optoelectronics Ltd.