MRA4003

SurfaceMountStandardRecoveryPowerRectifier

MSC4003

RFANDMICROWAVETRANSISTORSGENERALPURPOSEAMPLIFIERAPPLICATIONS

MT4003B-UBL

Marktech3mmUltraBrightYGLEDs

Features Lowdrivecurrent Choiceoflenscolor Canbepackagedontapeinareelorinabox

MXC4003XC

MonolithicandWaferLevelPackagedThree-AxisAccelerometer

MXP4003

InGaAs/InPPINPhotodiodeChips

DESCRIPTION Microsemi’sInGaAs/InPPINPhotodiodechipsareidealforwidebandwidth1310nmand1550nmopticalnetworkingapplications. KEYFEATURES LowDarkCurrent Extremelylowcapacitance Widebandwidth Fastresponsetime PPLICATIONS/BENEFIT 1310nmFiberOpticAppli

NCE4003

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE4003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=33mΩ@VGS=10V(Typ) RDS(ON)=52mΩ@VGS=4.5V(Typ

NCE4003A

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE4003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication. GeneralFeatures ●VDS=40V,ID=3A RDS(ON)=32mΩ@VGS=10V(Typ) RDS(ON)=43mΩ@VGS=4.5V(Ty

NTR4003N

SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3

SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin

NTR4003N

SmallSignalMOSFET30V,0.56A,SingleN?묬hannel,SOT??3

SmallSignalMOSFET 30V,0.56A,SingleN−Channel,SOT−23 Features •LowGateVoltageThreshold(VGS(TH))toFacilitateDriveCircuitDesign •LowGateChargeforFastSwitching •ESDProtectedGate •SOT−23PackageProvidesExcellentThermalPerformance •MinimumBreakdownVoltageRatin

NTR4003N

SmallSignalMOSFET