InGaAs/InP PIN Photodiode Chips

DESCRIPTION Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. KEY FEATURES Low Dark Current Extremely low capacitance Wide bandwidth Fast response time PPLICATIONS/BENEFIT 1310nm Fiber Optic Appli

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MICROSEMI

美高森美

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 33mΩ @ VGS=10V(Typ) RDS(ON) = 52mΩ @ VGS=4.5V(Typ

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NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE4003A uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =40V,ID =3A RDS(ON) = 32mΩ @ VGS=10V(Typ) RDS(ON) = 43mΩ @ VGS=4.5V(Ty

文件：701.61 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3

Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design • Low Gate Charge for Fast Switching • ESD Protected Gate • SOT−23 Package Provides Excellent Thermal Performance • Minimum Breakdown Voltage Ratin

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ONSEMI

安森美半导体