丝印：LGE3D20120D；Package：TO-247-3；Silicon Carbide Schottky Diode

文件：1.80835 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Posit

文件：1.37014 Mbytes 页数：5 Pages

LUGUANG

鲁光电子

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

文件：1.5181 Mbytes 页数：7 Pages

BASICSEMI

基本半导体

Silicon Carbide Schottky Diode

文件：2.98127 Mbytes 页数：5 Pages

LUGUANG

鲁光电子