B3D20120H规格书供应价格基本半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
B3D20120H	文件：1.5181 Mbytes Page：7 Pages	丝印：B3D20120H；Package：TO-247-2；SiC Schottky Diode Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec 文件：1.5181 Mbytes 页数：7 Pages	BASICSEMI 基本半导体	BASICSEMI
B3D20120H	文件：300 bytes Page：1 Pages	1200V SiC Schottky Diode	BASiC 基本半导体	BASiC
LGE3D20120A	文件：2.98127 Mbytes Page：5 Pages	Silicon Carbide Schottky Diode 文件：2.98127 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG
LGE3D20120D	文件：1.80835 Mbytes Page：5 Pages	Silicon Carbide Schottky Diode 文件：1.80835 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG
LGE3D20120H	文件：1.37014 Mbytes Page：5 Pages	Silicon Carbide Schottky Diode General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Posit 文件：1.37014 Mbytes 页数：5 Pages	LUGUANG 鲁光电子	LUGUANG

更多B3D20120H供应商更新时间2025-10-7 11:02:00