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LF444CD

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

文件:209.24 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

LF444CM/NOPB

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CM/NOPB.B

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMSLASHNOPB

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMSLASHNOPB.B

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMX/NOPB

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMX/NOPB.B

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMXSLASHNOPB

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CMXSLASHNOPB.B

丝印:LF444CM;Package:SOIC;LF444 Quad Low Power JFET Input Operational Amplifier

1FEATURES 23• ¼ Supply Current of a LM148: 200 μA/Amplifier (max) • Low Input Bias Current: 50 pA (max) • High Gain Bandwidth: 1 MHz • High Slew Rate: 1 V/μs • Low Noise Voltage for Low Power 35 nV/√Hz • Low Input Noise Current 0.01 pA/√Hz • High Input Impedance: 1012Ω • High Gain: 50k (m

文件:924.72 Kbytes 页数:21 Pages

TI

德州仪器

LF444CN

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

文件:209.24 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

技术参数

  • Package:

    eSGB (DO-221AC)

  • Status:

    Active

  • VRRM(V):

    400

  • Io(AV)(A):

    1

  • IFSM(A):

    30

  • VF(V):

    1.3

  • IR(uA):

    5

  • trr(nS):

    150

  • TJ (Max)(ºC):

    150

供应商型号品牌批号封装库存备注价格
NS
24+
CAN8
6980
原装现货,可开13%税票
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25+
PPAK
32500
普通
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NA
23+
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26094
10年以上分销经验原装进口正品,做服务型企业
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Texas Instruments
19+
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10000
只做原装正品,卖元器件不赚钱交个朋友
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2000
原装正品现货
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TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
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NS
86+
DIP8
1570
全新原装进口自己库存优势
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NS
04+
2000
询价
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25+
TO-5
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
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TEXAS INSTRUMENTS
23+
CDIP14
9600
全新原装正品!一手货源价格优势!
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更多LF4供应商 更新时间2026-1-31 8:41:00