丝印：LF356N；Package：PDIP(P)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356N；Package：PDIP(P)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

丝印：LF356N；Package：PDIP(P)；LFx5x JFET Input Operational Amplifiers

1 Features 1• Advantages – Replace Expensive Hybrid and Module FET Op Amps – Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices – Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner – Offset Adjust Does Not Degrade D

文件：2.10242 Mbytes 页数：47 Pages

TI

德州仪器

Single, 36-V, 5-MHz, high slew rate (12-V/µs), In to V+, JFET-input operational amplifier

The LFx5x devices are the first monolithic JFET input operational amplifiers to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drif • Advantages \n• Rugged JFETs Allow Blow-Out Free Handling Compared With MOSFET Input Devices\n• Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers\n• Internal Compensation and Large Differential Input Voltage Capability\n• Common Features \n• Low Input Of;

TI

德州仪器

JFET 输入型高速运算放大器

Sungine

双竞

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Series Monolithic JFET Input Operational Amplifiers

文件：543.17 Kbytes 页数：15 Pages

NSC

国半

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件：422.42 Kbytes 页数：4 Pages

LINER

凌力尔特

JFET-Input Operational Amplifiers Low Supply Current High Speed

文件：422.42 Kbytes 页数：4 Pages

LINER

凌力尔特