RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

ST

意法半导体

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

文件：154.63 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Three-Channel LCD Bias Power Management IC with Three-Channel High-Efficiency White LED Driver

文件：5.9304 Mbytes 页数：26 Pages

SKYWORKS

思佳讯