GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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MICROSEMI

美高森美

Varactors (Packaged and Die form)

Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition.  The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves.  The diodes are available in a variety of microwa

Microchip

微芯科技

Three-Channel LCD Bias Power Management IC with Three-Channel High-Efficiency White LED Driver

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SKYWORKS

思佳讯

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent

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STMICROELECTRONICS

意法半导体