RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mod

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STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology

ST

意法半导体

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

文件：69.48 Kbytes 页数：5 Pages

PANASONIC

松下

MAZ8xxxG Series

文件：687.23 Kbytes 页数：8 Pages

PANASONIC

松下