LED

0.80\" 7 SEGEMNTS DUAL DIGIT DISPLAY, 565nm GREEN CHIPS, GRAY FACE WITH WHITE SEGMENTS, RIGHT DECIMAL PLACES

LUMEX

律美

0.80 SEVEN SEGMENT, DUAL DIGIT DISPLAY

文件：127.17 Kbytes 页数：1 Pages

LUMEX

Package：18-DIP（0.866"，22.00mm）；包装：散装 类别：光电器件 显示器模块 - LED 字符与数字 描述：DISPLAY 7SEG 0.8\

Lumex Opto/Components Inc.

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

文件：21.01 Kbytes 页数：2 Pages

NTE

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨