IR-Lumineszenzdiode Infrared Emitter

Features • GaAs-LED in 5mm radial package (T 1 3/4) • Typical peak wavelength 950nm • High reliability • Available with two different lead lengths • Version with stand-off available • Suitable for TTW soldering Applications • IR remote control of hi-fi and TV-sets, video tape recorders, di

文件：143.55 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

文件：41.38 Kbytes 页数：5 Pages

SIEMENS

西门子

INFRARD EMITTER

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

文件：116.12 Kbytes 页数：2 Pages

SIEMENS

西门子

LD271 - 红外发射器, 25 °, T-1 3/4 (5mm), 100 mA, 1.3 V, 1 µs, 1 µs

The LD271 from Osram is a radial leaded infrared emitter. ·Standard diode case style of T-1 3/4 (5mm)\n·Forward current (If) of 100mA\n·Typical forward voltage of 1.3V at IF= 100mA\n·GaAs LED\n·Typical peak wavelength of 950nm\n·Viewing angle of 25°\n·Power dissipation of 220mW\n·Operating temperature range of -40°C to +100°C\n·Fall time of 1µs\n·Rise time;

ams-OSRAM

艾迈斯欧司朗

INFRARD EMITTER

Infineon

英飞凌

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

文件：41.38 Kbytes 页数：5 Pages

SIEMENS

西门子

INFRARD EMITTER

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

文件：116.12 Kbytes 页数：2 Pages

SIEMENS

西门子

IR-Lumineszenzdiode Infrared Emitter

Features • GaAs-LED in 5mm radial package (T 1 3/4) • Typical peak wavelength 950nm • High reliability • Available with two different lead lengths • Version with stand-off available • Suitable for TTW soldering Applications • IR remote control of hi-fi and TV-sets, video tape recorders, di

文件：143.55 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

文件：41.38 Kbytes 页数：5 Pages

SIEMENS

西门子

IR-Lumineszenzdiode Infrared Emitter

Features • GaAs-LED in 5mm radial package (T 1 3/4) • Typical peak wavelength 950nm • High reliability • Available with two different lead lengths • Version with stand-off available • Suitable for TTW soldering Applications • IR remote control of hi-fi and TV-sets, video tape recorders, di

文件：143.55 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗