GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High pulse handling capability ● long leads ● Available in groups ● Same package as SFH 300, SFH 203 Applications ● IR remote control of hi-fi and TV-sets, video tape recorders, dimme

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SIEMENS

西门子

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

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MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

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NTE

PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS

DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl

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STMICROELECTRONICS

意法半导体