用于SLIC保护的双线可编程瞬态电压抑制器

This device has been especially designed to protect 2 new high voltage, as well as classical SLICs, against transient overvoltages.\n\n Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT through the gate. S • Dual line programmable transient voltage suppressor with separated gates \n• Wide negative firing voltage range: VGn = -175 V max. \n• Low dynamic switching voltages: VFP and VDGL \n• Low gate triggering current: IGT = 5 mA max \n• Peak pulse current: IPP = 40 A (5/310 μs) \n• Holding current: IH ;

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Dual line programmable transient voltage suppressor for SLIC protection

文件：607.35 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：带盒（TB） 类别：电路保护 TVS - 晶闸管 描述：THYRISTOR 60A 8SOIC

STMICROELECTRONICS

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PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

DESCRIPTION This device has been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT thro

文件：112.92 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

Description These devices have been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT th

文件：125.76 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Programmable transient voltage suppressor for SLIC protection

文件：175.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体