PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

DESCRIPTION This device has been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT thro

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STMICROELECTRONICS

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PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

ST

意法半导体

PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

Description These devices have been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT th

文件：125.76 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

Description These devices have been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT th

文件：125.76 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Programmable transient voltage suppressor for SLIC protection

文件：175.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Programmable transient voltage suppressor for SLIC protection

文件：175.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Programmable transient voltage suppressor for SLIC protection

文件：175.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

用于SLIC保护的可编程瞬态电压抑制器

These devices have been especially designed to protect new high voltage, as well as classical SLICs, against transient overvoltages.\n\n Positive overvoltages are clamped by 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT through the gate.\ • Programmable transient suppressor \n• Wide negative firing voltage range: \n •VGn = -175 V max. \n• Low dynamic switching voltages: \n •VFP and VDGL \n• Low gate triggering current: IGT = 5 mA max. \n• Peak pulse current: IPP = 40 A (5/310 μs) \n• Holding current: IH = 150 mA min. \n• Benefits: \n;

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Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：电路保护 TVS - 晶闸管 描述：THYRISTOR 100A 8SOIC

STMICROELECTRONICS

意法半导体

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 晶闸管 描述：THYRISTOR 100A 8SOIC

STMICROELECTRONICS

意法半导体