LMV821IDCKT

LOW-VOLTAGERAIL-TO-RAILOUTPUTOPERATIONALAMPLIFIERS

LMV821ILT

Lowpower,highaccuracy,general-purposeoperationalamplifier

Description TheLMV82xandLMV82xAseriesofsingle,dual,andquadoperationalamplifiersofferlowvoltageoperationwithrail-to-railoutputswing.TheyoutperformtheindustrystandardLMV321,especiallywithregardtothegainbandwidthproduct(5.5MHz).TheLMV821,LMV822andLMV824areof

LMV821-N

Single/Dual/QuadLowVoltage,LowPower,R-to-ROutput,5MHzOpAmps

LMV821-N

LMV821-N/LMV822-N/LMV822-N-Q1/LMV824/LMV824-N-Q1Single/Dual/QuadLowVoltage

LND821

POWERMOSFET

GENERALDESCRIPTION TheLND820seriesprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoappro

LP821

SILICONGATEENHANCEMENTMODERFPOWERLDMOSTRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

LPCSMT821

SMDShieldedPowerInductor

Features: •Provideshighpowerandhighsaturation •Providesmagneticshieldingagainstradiation •Electrodedirectlyconnectedtoferritecore •ContactStackpoleforadditionalinductancevalues •Operatingtemperature40~125ºC •100%RoHScompliantandleadfreewithoutexemption

LPCT821

SMDUnshieldedPowerInductor

Features: •Provideshighpowerandhighsaturation •Silverplatedforlowcostdesign •Availableontapeandreelforautosurfacemounting •100%RoHScompliantandleadfreewithoutexemption •Halogenfree •REACHcompliant •ContactStackpoleforadditionalinductancevalues A

LPV821

650nA,Precision,Nanopower,Zero-DriftAmplifier

LPV821

650nA,Precision,Nanopower,Zero-DriftAmplifier