LMV821-N

Single/Dual/Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

LMV821-N

LMV821-N/LMV822-N/LMV822-N-Q1/LMV824/LMV824-N-Q1 Single/Dual/Quad Low Voltage

LMV821-N_15

LMV82x Single/Dual/Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

LMV821-N_16

Single/Dual/Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps

LND821

POWERMOSFET

GENERALDESCRIPTION TheLND820seriesprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoappro

LP821

SILICONGATEENHANCEMENTMODERFPOWERLDMOSTRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers. Polyfetprocessfeatureslowfeedbackandoutputcapacitances,re

LPCSMT821

SMDShieldedPowerInductor

Features: •Provideshighpowerandhighsaturation •Providesmagneticshieldingagainstradiation •Electrodedirectlyconnectedtoferritecore •ContactStackpoleforadditionalinductancevalues •Operatingtemperature40~125ºC •100%RoHScompliantandleadfreewithoutexemption

LPCT821

SMDUnshieldedPowerInductor

Features: •Provideshighpowerandhighsaturation •Silverplatedforlowcostdesign •Availableontapeandreelforautosurfacemounting •100%RoHScompliantandleadfreewithoutexemption •Halogenfree •REACHcompliant •ContactStackpoleforadditionalinductancevalues A

LPV821

650nA,Precision,Nanopower,Zero-DriftAmplifier

LPV821

650nA,Precision,Nanopower,Zero-DriftAmplifier