POWER MOSFET

GENERAL DESCRIPTION The LND820 series provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to appro

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LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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Polyfet

SMD Shielded Power Inductor

Features: • Provides high power and high saturation • Provides magnetic shielding against radiation • Electrode directly connected to ferrite core • Contact Stackpole for additional inductance values • Operating temperature 40 ~ 125ºC • 100% RoHS compliant and lead free without exemption

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SEI

世达柏

SMD Unshielded Power Inductor

Features: • Provides high power and high saturation • Silver plated for low cost design • Available on tape and reel for auto surface mounting • 100% RoHS compliant and lead free without exemption • Halogen free • REACH compliant • Contact Stackpole for additional inductance values A

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SEI

世达柏