LBAT30LT1G资料使用说明书贸易商乐山无线电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
LBAT30LT1G	文件：75.53 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODE ● Features Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ● Construction Silicon epitaxial planar ● We declare that the material 文件：75.53 Kbytes 页数：2 Pages	LRC 乐山无线电	LRC
LBAT30LT1G_15	文件：75.52 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODE 文件：75.52 Kbytes 页数：2 Pages	LRC 乐山无线电	LRC
LBAT30LT1G	文件：300 bytes Page：1 Pages	肖特基二极管	LRC 乐山无线电	LRC
SBCW30LT1G	文件：255.8 Kbytes Page：7 Pages	General Purpose Transistors 文件：255.8 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
S-LBAT30LT1G	文件：75.53 Kbytes Page：2 Pages	SCHOTTKY BARRIER DIODE ● Features Extremely Low Forward Voltage 0.3 V (max) @ IF = 10 mA S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ● Construction Silicon epitaxial planar ● We declare that the material 文件：75.53 Kbytes 页数：2 Pages	LRC 乐山无线电	LRC

更多LBAT30LT1G供应商更新时间2025-8-23 9:19:00