High-voltage high and low side driver

Description The L6391 is a high-voltage device manufactured with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel power MOSFET or IGBT.The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatib

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STMICROELECTRONICS

意法半导体

高压高侧和低侧驱动器

The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.\n\n The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •290 mA source \n •430 mA sink \n• Switching times 75/35 nsec rise/fall with 1 nF load \n• 3.3 V, 5 V TTL/CMOS inputs with hysteresis \n• Integrated bootstrap diode \n• Comparat;

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Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 14SO

STMICROELECTRONICS

意法半导体