丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L132B；Package：WSON；LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver

1 Features • LM5112-Q1 is Qualified for Automotive Applications • AEC-Q100 Grade 1 Qualified • Manufactured on an Automotive Grade Flow • Compound CMOS and Bipolar Outputs Reduce Output Current Variation • 7-A Sink and 3-A Source Current • Fast Propagation Times: 25 ns (Typical) • Fast Ri

文件：480.42 Kbytes 页数：21 Pages

TI

德州仪器

丝印：L13K；Package：WQFN-HR(RQE)；LMH13000 Integrated High-Speed, Voltage-Controlled, Current-Output Laser Driver for LiDAR and Time-of-Flight

1 Features • Voltage-controlled current driver (current sink) • Supports output currents from 50mA to 5A • Drives continuous and pulsed currents – Rise time (tr): 800ps rise time – Pulse train: DC to 250MHz • Low-current and high-current modes • 18V tolerance on IOUT • Supports LVDS, TTL,

文件：2.59072 Mbytes 页数：35 Pages

TI

德州仪器

丝印：L1304S；Package：VSSOP；MSPM0L130x Mixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU, frequency up to 32 MHz • Operating characteristics – Extended temperature: –40°C to 125°C – Wide supply voltage range: 1.62 V to 3.6 V • Memories – Up to 64KB of flash – Up to 4KB of SRAM • High-performance analog peripherals – One 12-bit

文件：2.63232 Mbytes 页数：86 Pages

TI

德州仪器

丝印：L1304S；Package：VSSOP；MSPM0L130x Mixed-Signal Microcontrollers

1 Features • Core – Arm® 32-bit Cortex®-M0+ CPU, frequency up to 32 MHz • Operating characteristics – Extended temperature: –40°C to 125°C – Wide supply voltage range: 1.62 V to 3.6 V • Memories – Up to 64KB of flash – Up to 4KB of SRAM • High-performance analog peripherals – One 12-bit

文件：2.66006 Mbytes 页数：86 Pages

TI

德州仪器