LM5112SDXSLASHNOPB中文资料德州仪器数据手册PDF规格书

1 Features

• LM5112-Q1 is Qualified for Automotive

Applications

• AEC-Q100 Grade 1 Qualified

• Manufactured on an Automotive Grade Flow

• Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

• 7-A Sink and 3-A Source Current

• Fast Propagation Times: 25 ns (Typical)

• Fast Rise and Fall Times: 14 ns or 12 ns

Rise or Fall With 2-nF Load

• Inverting and Non-Inverting Inputs Provide Either

Configuration With a Single Device

• Supply Rail Undervoltage Lockout Protection

• Dedicated Input Ground (IN_REF) for

Split Supply or Single Supply Operation

• Power Enhanced 6-Pin WSON Package

(3 mm × 3 mm) or Thermally Enhanced

MSOP-PowerPAD Package

• Output Swings From VCC to VEE Which Are

Negative Relative to Input Ground

2 Applications

• DC to DC Switch-Mode Power Supplies

• AC to DC Switch-Mode Power Supplies

• Solar Microinverters

• Solenoid and Motor Drives

3 Description

The LM5112 device MOSFET gate driver provides

high peak gate drive current in the tiny 6-pin WSON

package (SOT-23 equivalent footprint) or an 8-pin

exposed-pad MSOP package with improved power

dissipation required for high frequency operation. The

compound output driver stage includes MOS and

bipolar transistors operating in parallel that together

sink more than 7 A peak from capacitive loads.

Combining the unique characteristics of MOS and

bipolar devices reduces drive current variation with

voltage and temperature. Undervoltage lockout

protection is provided to prevent damage to the

MOSFET due to insufficient gate turnon voltage. The

LM5112 device provides both inverting and noninverting

inputs to satisfy requirements for inverting

and non-inverting gate drive with a single device type.