EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

HIGH-DEFINITION CRT DISPLAY, VIDEO OUTPUT APPLICATIONS. FEATURES • High breakdown voltage : VCEO 300V. • Small reverse transfer capacitance and excellent high frequency characteristic. : Cre=2.3pF (VCB=30V, f=1MHz) • Complementary KTC3503.

文件：398.43 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

EPITAXIAL PLANAR PNP TRANSISTOR

文件：404.06 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

General Purpose Transistor, TO-126, -300V, -0.1A

• High Breakdown Voltage : Vceo=300V\n• Small Reverse Transfer Capacitance and Excellent High Frequency characteristic\n• Complementary KTC3503.;

KEC

开益禧

CMOS LSIs for Voltage Detection

文件：157.37 Kbytes 页数：20 Pages

PANASONIC

松下

CMOS LSIs for Voltage Detection

文件：157.37 Kbytes 页数：20 Pages

PANASONIC

松下

CMOS LSIs for Voltage Detection

文件：157.37 Kbytes 页数：20 Pages

PANASONIC

松下