EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity. : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA • 1 Watt Amplifier Application. • Complementary to KTC1020.

文件：236.18 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURE • Complementary to KTC1027.

文件：334.61 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to KTC1027

文件：2.21646 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Plastic Encapsulated Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Audio power amplifier • High Current

文件：57.24 Kbytes 页数：1 Pages

SECOS

喜可士

Silicon PNP transistor in a TO-92LM Plastic Package.

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features Complementary pair with KTC1027. Applications High voltage application.

文件：948.84 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP Plastic Encapsulated Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Audio power amplifier • High Current

文件：57.24 Kbytes 页数：1 Pages

SECOS

喜可士

PNP Plastic Encapsulated Transistor

FEATURE • Low collector to emitter saturation voltage VCE(sat). • Audio power amplifier • High Current

文件：57.24 Kbytes 页数：1 Pages

SECOS

喜可士

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Voltage : VCEO=-150V. ● Low Output Capacitance : Cob=5.0pF(Max.). ● High Transition frequency : fT=120MHz (Typ.). ● Complementary to KTC3206.

文件：6.10593 Mbytes 页数：3 Pages

JIANGSU

长电科技

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE)

HIGH VOLTAGE APPLICATION. FEATURES • High Voltage : VCEO=-150V. • Low Output Capacitance : Cob=5.0pF(Max.). • High Transition Frequency : fT=120MHz (Typ.). • Complementary to KTC3206.

文件：384.57 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

PNP Transistors

文件：1.033849 Mbytes 页数：2 Pages

KEXIN

科信电子