EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : PC=1.3W(Ta=25°C) • Complementary to KTC5103D/L

文件：400.91 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low collector-to-emitter saturation voltage. ·Fast switching speed

文件：332 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -2A APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers

文件：304.84 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

文件：406.54 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

Switching Transistor, DPAK, -60V, -5A

• Low Leakage Current\n• Low Saturation Voltage\n• Suitable for using Switching application;

KEC