EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS FEATURES • High breakdown voltage VCEO 120V, high current 1A. • Low saturation voltage and good linearity of hFE. • Complementary to KTC2025D/L

文件：399.48 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -120V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.4V(Max) @IC= -0.5A APPLICATIONS · Low frequency amplifier

文件：305.21 Kbytes 页数：3 Pages

ISC

无锡固电

EPITAXIAL PLANAR PNP TRANSISTOR

文件：405.11 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, DPAK, -120V, -1A

• High Breakdown Voltage VCEO 120V, High Current 1A\n• Low Saturation Voltage and Good Linearity of hFE\n• Complementary to KTC2025D;

KEC