KTA1266A

SEMICONDUCTOR TECHNICAL DATA

GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). •LowNoise:NF=1dB(Typ.).atf=1kHz. •ComplementarytoKTC3198A.

KTA1266A

SEMICONDUCTOR TECHNICAL DATA;

KTA1266AY

EPITAXIAL PLANAR PNP TRANSISTOR; ·Excellent hFELinearity\n: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA\n: hFE(IC=0.1mA)/hFE (IC=2mA)=0.95(Typ.).\n·Low Noise : NF=1dB(Typ.). at f=1kHz.\n·Complementary to KTC3198A.;

GENERAL PURPOSE APPLICATION.\nSWITCHING APPLICATION.\nFEATURES\n·Excellent hFELinearity\n: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA\n: hFE(IC=0.1mA)/hFE (IC=2mA)=0.95(Typ.).\n·Low Noise : NF=1dB(Typ.). at f=1kHz.\n·Complementary to KTC3198A.

KTA1266-G

PNPTransistors

KTA1266-GR

PNPPlasticEncapsulatedTransistor

FEATURE ●ExcellenthFELinearity ●LowNoise ●ComplementarytoKTC3198

KTA1266L

EPITAXIALPLANARPNPTRANSISTOR(LOWNOISEAMPLIFIER)

LOWNOISEAMPLIFIERAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=80(Typ.)atVCE=-6V,IC=-150mA :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). •LowNoise:NF=0.2dB(Typ.).f=(1kHz). •ComplementarytoKTC3198L.