isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector-Emitter saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • General purpose applications

文件：250.13 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -2.0V(Max) @IC= -4A APPLICATIONS · Low frequency amplifier

文件：305.05 Kbytes 页数：3 Pages

ISC

无锡固电

TO-252-2L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Low Collector-Emitter Saturation Voltage APPLICATIONS General Purpose Application

文件：916.15 Kbytes 页数：4 Pages

JIANGSU

长电科技

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). • Complementary to KTC2022D/L.

文件：395.7 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR PNP TRANSISTOR

文件：401.34 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

General Purpose Transistor, DPAK, -100V, -5A

• Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(max.)\n• Complementary to KTC2022D.;

KEC

晶体管

JSCJ

长晶科技

Transistor

Semiteh